parameter l value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 75 v emitter-base voltage v ebo 5.0 v collector current i c 3.0 a base current i b 1.5 a total dissipation at p tot 10 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SC2078 parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v ce =40v, i e =0 10 ua emitter cut-off current i ebo v eb =4v, i c =0 10 ua collector-emitter sustaining voltage v ceo i c =10ma, i b =0 75 v dc current gain h fe(1) v ce =5v, i c =0.5a 25 200 h fe(2) v ce =5v, i c =1.0a 10 collector-emitter saturation voltage v ce(sat) i c =1.0a,i b =0.1a 0.6 v base-emitter saturation voltage v be(sat) i c =1.0a,i b =0.1a 1.2 v current gain bandwidth product f t v ce =10v, i c =0.1a 100 150 mhz output capacitance c ob v cb =10v,i e =0,f=1.0mhz 45 60 pf 27mhz rf power amplifier applications product specification electrical characteristics ( ta = 25 ) absolute maximum ratings ( ta = 25 ) to-220 h fe classification classification b c d e h fe1 25 ~ 50 40 ~ 80 60 ~ 120 100 ~ 200 tiger electronic co.,ltd
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